$32.0M
The Series C round was led by a strategic investor and backed by existing supporters to drive international expansion.
CG
Cambridge GaN Devices
Developer of power semiconductor devices using Gallium-Nitride on Silicon technology.
Cambridge, UK—Founded 2016
$57.0MTotal raised
Cambridge GaN Devices is a university spin-out developing power semiconductor devices based on Gallium-Nitride on Silicon substrates.
Filed accounts
Cash at bank
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Net current assets
Members only
Total assets less current liabilities
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Shareholders' funds
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Current assets
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Employees
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Cash, assets and headcount from Cambridge GaN Devices's latest Companies House filing — with year-on-year movement, free with a Winfred account.
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Founders
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Giorgia Longobardi
CEO and Founder
Giorgia founded Cambridge GaN Devices, where she currently serves as chief marketing officer after previously leading the company as chief executive officer. Her background includes research and fellowship roles at the University of Cambridge, Kyushu Institute of Technology, and LAAS-CNRS.
LinkedInInvestors
- $32.0M
- £15.5MIQ CapitalFollow-on
MartletFollow-on
- $9.5M
Funding history
£15.5M
The Series B financing was led by Parkwalk Advisors and BGF to support the commercial scale-up of power transistors.
$9.5M
The financing round was co-led by IQ Capital, Parkwalk Advisors and BGF to scale the company's product range and double headcount.
The funding supports the development of power semiconductor devices based on Gallium-Nitride technology.