Cambridge GaN Devices raises $32m in Series C funding to expand internationally.
The Series C round was led by a strategic investor and backed by existing supporters to drive international expansion.
Cambridge GaN Devices is a university spin-out developing power semiconductor devices based on Gallium-Nitride on Silicon substrates.
Cambridge GaN Devices has secured $32m in Series C funding to accelerate its international expansion and scale operations. The round was led by an unnamed strategic investor, with participation from existing backers including Foresight Group, BGF, Cambridge Innovation Capital, Parkwalk, IQ Capital, and British Patient Capital.
The capital will support the company as it targets growing demand in the automotive, data centre, and industrial power sectors. Foresight Group contributed £1.1m through its ventures team as part of the financing.
Founded as a University of Cambridge spin-out, the firm produces gallium nitride power devices that offer significant energy savings compared to traditional silicon components.
From the founder
"This funding round marks a pivotal moment for CGD. It validates our technology and vision to revolutionise the power electronics industry with our efficient GaN solutions and make sustainable power electronics possible."
Giorgia Longobardi
CEO and Founder at Cambridge GaN Devices
Investor perspective
"We are delighted to continue backing the ambitious CGD team in bringing groundbreaking GaN technologies to market. As we strive towards a low-carbon future, CGD’s products can deliver higher performance while enabling up to 50% energy savings across multiple growing sectors such as automotive, renewable energy, and data centres. We look forward to seeing the impact that CGD can make in enabling greener power electronics"
Rubina Singh
investor, Octopus
Use of funds
- 01Expand into international markets
- 02Scale operations
Investors
Categories
About the company
Cambridge GaN Devices
Developer of power semiconductor devices using Gallium-Nitride on Silicon technology.



