Cambridge GaN Devices secures angel funding from Cambridge Capital Group and university investors.
The funding supports the development of power semiconductor devices based on Gallium-Nitride technology.
Cambridge GaN Devices is a university spin-out developing power semiconductor devices based on Gallium-Nitride on Silicon substrates.
Cambridge GaN Devices has secured a new angel investment led by Cambridge Capital Group, in syndication with the University and other backers. The funding will support the company as it commercialises its power semiconductor technology based on Gallium-Nitride on Silicon substrates.
The spin-out aims to deliver significant improvements in energy efficiency and compactness while enabling high volume production at low unit costs. Members of Cambridge Capital Group participated alongside other investors to back the new leadership team.
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Cambridge GaN Devices
Developer of power semiconductor devices using Gallium-Nitride on Silicon technology.